PART |
Description |
Maker |
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
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TOKO, Inc. EPCOS AG
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CY7C1303BV25-167BZC CY7C1306BV25-167BZC CY7C1303BV |
18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor
|
CY7C1302DV25 CY7C1302DV25-167 CY7C1302DV25-100 CY7 |
9-Mbit Burst of Two Pipelined SRAMs with QDR(TM) Architecture 9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1305BV25-167BZI CY7C1305BV25-167BZXC CY7C1305B |
18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
CY7C1305BV25-133BZC CY7C1307BV25-133BZC CY7C1307BV |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor Corp.
|
CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics. 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36 / 1兆位× 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor Corp.
|
BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 18-Mbit QDR-II SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 20W DC-DC Converter(输出功率20WDC-DC转换
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M.S. Kennedy Corp. M.S. Kennedy Corporation
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K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
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Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
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STMICROELECTRONICS[STMicroelectronics]
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M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC |
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209 ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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Cypress Semiconductor Corp. SRAM Cypress Semiconductor, Corp.
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IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4 18Mb Pipelined DDR垄芒II SRAM Burst of 4
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Integrated Device Technology
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